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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3P(I) package High breakdown voltage Excellent switching times APPLICATIONS Switching regulator and high voltage Switching applications High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC2792 Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H OND IC CONDITIONS TOR UC VALUE 850 800 7 2 4 1 UNIT V V V A A A W ae ae Open emitter Open base Open collector Emitter-base voltage Collector current-DC Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25ae 80 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ,IB=0 IC=1mA ,IE=0 IC=500mA; IB=50mA IC=500mA; IB=50mA VCB=800V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V 10 MIN 800 850 2SC2792 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V 1.0 1.5 100 1.0 |I V V A mA Switching times tr tstg tf Rise time Fall time Storage time CHA IN E SEM NG VCC=400V; 2IB1=-IB2=0.1A; RL=800| OND IC TOR UC 1.0 |I |I 4.0 1.0 s s |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2792 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2792 CHA IN E SEM NG OND IC TOR UC 4 |
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